Low Drop Voltage Regulators: SMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS2950CN-3V TO92 AMS Advanced Monolithic Systems AMS2950CN-3V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS2950CN-3V TO92 AMS Advanced Monolithic Systems AMS2950CN-3V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO92 AMS Advanced Monolithic Systems AMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V,SMS2950CN-3V,150mA Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire Low Drop Voltage Regulators: SMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS2950CN-3V TO92 AMS Advanced Monolithic Systems AMS2950CN-3V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor Low Drop Voltage Regulators: SMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR same as AMS Advanced Monolithic Systems AMS2950CN-3V TO92 AMS Advanced Monolithic Systems AMS2950CN-3V manufactured by Semiconix Semiconductor - Gold chip technology for known good Low Drop Voltage Regulators die, Low Drop Voltage Regulators flip chip, Low Drop Voltage Regulators die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO92 AMS Advanced Monolithic Systems AMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V,SMS2950CN-3V,150mA Low Drop Voltage Regulators,,Low Drop Voltage Regulators, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMS2950CN-3V - BARE DIE GOLD CHIP TECHNOLOGY™ 150mA LOW DROPOUT VOLTAGE REGULATOR FEATURES APPLICATIONS 150mA Low Drop Voltage Regulators - BARE DIE High Accuracy Output Voltage: 5V, 3.3V, and 3V Versions at 100mA Output Current Extremely Low Quiescent Current, Low Dropout Voltage Extremely Tight Load and Line Regulation Very Low Temperature Coefficient Current and Thermal Limiting Needs Minimum Capacitance (1µF) for Stability Unregulated DC Positive Transients 60V High reliability bare die Gold metallization RoHS compliant, Lead Free Compatible with chip and wire assemblies Battery Powered Systems Portable Consumer Equipment Cordless Telephones Portable (Notebook) Computers Portable Instrumentation Radio Control Systems Automotive Electronics Avionics Low-Power Voltage Reference Chip on Board System in package SIP Hybrid Circuits SMS2950CN-3V AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR Actual die layout may vary 150mA LOW DROPOUT VOLTAGE REGULATOR - PRODUCT DESCRIPTION SMS2950 and SMS2951 are micro power voltage regulators ideally suited for use in battery-powered systems. These devices feature very low quiescent current (typ.75µA), and very low dropout voltage (typ.45mV at light loads and 380mV at 150mA) thus prolonging battery life. The quiescent current increases only slightly in dropout. The SMS2950/SMS2951 has positive transient protection up to 60V and can survive unregulated input transient up to 20V below ground. The SMS2950 and SMS2951 were designed to include a tight initial tolerance (typ. 0.5%), excellent load and line regulation (typ. 0.05%), and a very low output voltage temperature coefficient, making these devices useful as a low-power voltage reference. The SMS2950 is offered in the 3-pin TO-92 package. SMS2951 is available in 8-pin plastic SOIC and DIP packages and offers three major additional system features. An error flag output warns of a low output voltage, often due to failing batteries on input. The SMS2951 also features the logic-compatible shutdown input which enables the regulator to be switched on and off. The SMS2951 device may be pin-strapped for a 2.5V, 3.0V, 3.3V or 5.0V output, or programmed from 1.24V to 29V with an external pair of resistors. Low Drop Voltage Regulators Integrated Circuits BD series products available in die form are ideal for high reliability hybrid circuits and multi chip module applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Parameter Symbol Value Unit Power Dissipation Internally limited Input Voltage -0.3 to +30 V Operating Voltage Range 30 V FEEDBACK Input Voltage -1.5 to +30 V Storage Temperature -65 to +150 °C Operating Junction Temperature -40 to +125 °C Electrical Characteristics at Vs=Vout+1V, Ta=25°C, unless otherwise noted. Name Symbol Test Conditions Value Unit Min. Typ. Max Output Voltage TJ=25°C (Note 3) 2.97 3 3.03 V Output Voltage -25°C≤TJ≤85°C 2.955 3 3.045 V Output Voltage, over the full operating temperature range. Full Operating Temperature Range 2.94 3 3.06 V Output Voltage 100 µA≤IL≤150mA,TJ≤TJMAX 2.928 3 3.072 V Line Regulation 6V≤Vin≤30V (Note 15) 0.04 0.2 % Load Regulation, (Notes 2, 3) 100 µA≤IL≤150 mA 0.1 0.2 % Dropout Voltage (VIN - VOUT) IL=100µ A 50 80 mV Dropout Voltage (VIN - VOUT) IL=150 mA 380 450 mV Current Limit Vout=0 160 200 mA Output Voltage TC (VOUT TC) (Note 12) (Note 4) 50 ppm/°C Ground Pin Current IL=100 µA 75 120 m A Ground Pin Current IL=150 mA 8 12 mA Output Noise Voltage 10Hz to 100KHz,CL=1µF 430 µV rms Output Noise Voltage 10Hz to 100KHz,CL=200 µF 160 µV rms Output Noise Voltage 10Hz to 100KHz,CL=13.3 µF 100 µV rms Thermal Regulation (Note 13) 0.05 0.2 %/W Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: Unless otherwise specified all limits guaranteed for VIN = ( VONOM +1)V, IL = 100 µA and CL = 1 µF for 5V versions and 2.2µF for 3V and 3.3V versions. Limits appearing in boldface type apply over the entire junction temperature range for operation. Limits appearing in normal type apply for TA = TJ = 25°C Additional conditions for the 8-pin versions are FEEDBACK tied to VTAP, OUTPUT tied to SENSE and VSHUTDOWN ≤ 0.8V. Note 3: Guaranteed and 100% production tested. Note 4: Guaranteed but not 100% production tested. These limits are not used to calculate outgoing AQL levels. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 100 mV below its nominal value measured at 1V differential. At very low values of programmed output voltage, the minimum input supply voltage of 2V ( 2.3V over temperature) must be taken into account. Note 6: Comparator thresholds are expressed in terms of a voltage differential at the feedback terminal below the nominal reference voltage measured at VIN = ( VONOM +1)V. To express these thresholds in terms of output voltage change, multiply by the error amplifier gain = Vout/Vref = (R1 + R2)/R2. For example, at a programmed output voltage of 5V, the error output is guaranteed to go low when the output drops by 95 mV x 5V/1.235 = 384 mV. Thresholds remain constant as a percent of Vout as Vout is varied, with the dropout warning occurring at typically 5% below nominal, 7.5% guaranteed. Note 7: Vref ≤Vout ≤ (Vin - 1V), 2.3 ≤Vin≤30V, 100µA≤IL≤ 100 mA, TJ ≤ TJMAX. Note 8: The junction-to-ambient thermal resistance are as follows:180°C/W and 160°C/W for the TO-92 (N) package with 0.40 inch and 0.25 inch leads to the printed circuit board (PCB) respectively, 105°C/W for the molded plastic DIP (P) and 160°C/W for the molded plastic SO-8 (S). The above thermal resistances for the N, S and P packages apply when the package is soldered directly to the PCB. Note 9: May exceed input supply voltage. Note 10: When used in dual-supply systems where the output terminal sees loads returned to a negative supply, the output voltage should be diode-clamped to ground. Note 11: Vshutdown ≥ 2V, Vin ≤ 30V, Vout =0, Feedback pin tied to 5VTAP. Note 12: Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the total temperature range. Note 13: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a 50mA load pulse at VIN =30V (1.25W pulse) for T =10 ms. Note 14: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects are covered under the specification for thermal regulation. Note 15: Line regulation for the LP2951 is tested at 150°C for IL = 1 mA. For IL = 100 µA and TJ = 125°C, line regulation is guaranteed by design to 0.2%. See typical performance characteristics for line regulation versus temperature and load current. Note 16: All LP2950 devices have the nominal output voltage coded as the last two digits of the part number. In the LP2951 products, the 3.0V and 3.3V versions are designated by the last two digits, but the 5V version is denoted with no code of the part number. SPICE MODEL AMS2950CN-3V spice model pending. CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS2950CN-3V GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding pads Backside metallization Silicon Si 10 1 81x45±1 [2.05x1.15±0.025] Pads are minimum 4x4mils, 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Actual die layout may vary SMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR SMS2950CN-3V AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR Pad locations Pin # Function X [µm] Y [µm] X [mils] Y [mils] 1 Out 440 110 17.32 4.33 2 GND 1865 110 73.43 4.33 3 In 440 950 17.32 37.40 SMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR APPLICATION HINTS APPLICATION HINTS External Capacitors A 1.0µF or greater capacitor is required between output and ground for stability at output voltages of 5V or more. At lower output voltages, more capacitance is required (2.2µF or more is recommended for 3V and 3.3V versions). Without this capacitor the part will oscillate. Most types of tantalum or aluminum electrolytic works fine here; even film types work but are not recommended for reasons of cost. Many aluminum types have electrolytes that freeze at about -30°C, so solid tantalums are recommended for operation below -25°C. The important parameters of the capacitor are an ESR of about 5Ω or less and resonant frequency above 500 kHz parameters in the value of the capacitor. The value of this capacitor may be increased without limit. At lower values of output current, less output capacitance is required for stability. The capacitor can be reduced to 0.33µF for currents below 10 mA or 0.1µF for currents below 1mA. Using the adjustable versions at voltages below 5V runs the error amplifier at lower gains so that more output capacitance is needed. For the worst-case situation of a 100mA load at 1.23V output (Output shorted to Feedback) a 3.3µF (or greater) capacitor should be used. Unlike many other regulators, the SMSLP2950, will remain stable and in regulation with no load in addition to the internal voltage divider. This is especially important in CMOS RAM keep-alive applications. A 1µF tantalum or aluminum electrolytic capacitor should be placed from the SMSLP2950 input to the ground if there is more than 10 inches of wire between the input and the AC filter capacitor or if a battery is used as the input. Error Detection Comparator Output The comparator produces a logic low output whenever the SMSLP2950 output falls out of regulation by more than approximately 5%. This figure is the comparatorís built-in offset of about 60 mV divided by the 1.235 reference voltage. (Refer to the block diagram in the front of the datasheet.) This trip level remains 5% below normal regardless of the programmed output voltage of the 2950. For example, the error flag trip level is typically 4.75V for a 5V output or 11.4V for a 12V output. The out of regulation condition may be due either to low input voltage, current limiting, or thermal limiting. Figure 2 gives a timing diagram depicting the ERROR signal and the regulator output voltage as the SMSLP2950 input is ramped up and down. For 5V versions the ERROR signal becomes valid (low) at about 1.3V input. It goes high at about 5V input (the input voltage at which Vout = 4.75 ). Since the SMSLP2950 dropout voltage is load dependent (see curve in typical performance characteristics), the input voltage trip point (about 5V) will vary with the load current. The output voltage trip point (approx. 4.75V) does not vary with load. The error comparator has an open-collector output which requires an external pullup resistor. This resistor may be returned to the output or some other supply voltage depending on system requirements. In determining a value for this resistor, note that the output is rated to sink 400µA, this sink current adds to battery drain in a low battery condition. Suggested values range from 100KOmega; to 1MΩ. The resistor is not required if this output is unused. Reducing Output Noise In reference applications it may be an advantageous to reduce the AC noise present at the output. One method is to reduce the regulator bandwidth by increasing the size of the output capacitor. This is the only way that noise can be reduced on the 3 lead SMSLP2950 but is relatively inefficient, as increasing the capacitor from 1µF to 220µF only decreases the noise from 430µV to 160µV rms for a 100 kHz bandwidth at 5V output. Noise could also be reduced fourfold by a bypass capacitor across R1, since it reduces the high frequency gain from 4 to unity. Pick CBYPASS=1/(2πR1) ◊ 200 Hz or about 0.01µF. When doing this, the output capacitor must be increased to 3.3µF to maintain stability. These changes reduce the output noise from 430µV to 100µV rms for a 100 kHz bandwidth at 5V output. With the bypass capacitor added, noise no longer scales with output voltage so that improvements are more dramatic at higher output voltages. 5Volt Current Limiter Figure 1: 5Volt Current Limiter ERROR Output Timing Figure 2: ERROR Output Timing SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. STANDARD PRODUCTS ORDERING INFORMATION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) SMS2950CN-3V-BD -WP 1000 -FF 1000 SMS2950CN-3V-BD -WP 5000 -FF 5000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated:January 01, 1970 Display settings for best viewing: Current display settings: Page hits: 1 Screen resolution: 1124x864 Screen resolution: Total site visits: 1 Color quality: 16 bit Color quality: bit © 1990-2009 SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

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semiconix semiconductor - where the future is today - gold chip technology SMS2950CN-3V - BARE DIE
GOLD CHIP TECHNOLOGY™ 150mA LOW DROPOUT VOLTAGE REGULATOR

FEATURES APPLICATIONS 150mA Low Drop Voltage Regulators - BARE DIE
High Accuracy Output Voltage: 5V, 3.3V, and 3V Versions at 100mA Output Current
Extremely Low Quiescent Current, Low Dropout Voltage
Extremely Tight Load and Line Regulation
Very Low Temperature Coefficient
Current and Thermal Limiting
Needs Minimum Capacitance (1µF) for Stability
Unregulated DC Positive Transients 60V
High reliability bare die
Gold metallization
RoHS compliant, Lead Free
Compatible with chip and wire assemblies
Battery Powered Systems
Portable Consumer Equipment
Cordless Telephones
Portable (Notebook) Computers
Portable Instrumentation
Radio Control Systems
Automotive Electronics
Avionics
Low-Power Voltage Reference
Chip on Board
System in package SIP
Hybrid Circuits
SMS2950CN-3V AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR
Actual die layout may vary

150mA LOW DROPOUT VOLTAGE REGULATOR - PRODUCT DESCRIPTION
SMS2950 and SMS2951 are micro power voltage regulators ideally suited for use in battery-powered systems. These devices feature very low quiescent current (typ.75µA), and very low dropout voltage (typ.45mV at light loads and 380mV at 150mA) thus prolonging battery life. The quiescent current increases only slightly in dropout. The SMS2950/SMS2951 has positive transient protection up to 60V and can survive unregulated input transient up to 20V below ground. The SMS2950 and SMS2951 were designed to include a tight initial tolerance (typ. 0.5%), excellent load and line regulation (typ. 0.05%), and a very low output voltage temperature coefficient, making these devices useful as a low-power voltage reference. The SMS2950 is offered in the 3-pin TO-92 package. SMS2951 is available in 8-pin plastic SOIC and DIP packages and offers three major additional system features. An error flag output warns of a low output voltage, often due to failing batteries on input. The SMS2951 also features the logic-compatible shutdown input which enables the regulator to be switched on and off. The SMS2951 device may be pin-strapped for a 2.5V, 3.0V, 3.3V or 5.0V output, or programmed from 1.24V to 29V with an external pair of resistors.
Low Drop Voltage Regulators Integrated Circuits BD series products available in die form are ideal for high reliability hybrid circuits and multi chip module applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
Parameter Symbol Value Unit
Power Dissipation Internally limited
Input Voltage -0.3 to +30 V
Operating Voltage Range 30 V
FEEDBACK Input Voltage -1.5 to +30 V
Storage Temperature -65 to +150 °C
Operating Junction Temperature -40 to +125 °C

Electrical Characteristics at Vs=Vout+1V, Ta=25°C, unless otherwise noted.
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Output Voltage TJ=25°C (Note 3) 2.97 3 3.03 V
Output Voltage -25°C≤TJ≤85°C 2.955 3 3.045 V
Output Voltage, over the full operating temperature range. Full Operating Temperature Range 2.94 3 3.06 V
Output Voltage 100 µA≤IL≤150mA,TJ≤TJMAX 2.928 3 3.072 V
Line Regulation 6V≤Vin≤30V (Note 15) 0.04 0.2 %
Load Regulation, (Notes 2, 3) 100 µA≤IL≤150 mA 0.1 0.2 %
Dropout Voltage (VIN - VOUT) IL=100µ A 50 80 mV
Dropout Voltage (VIN - VOUT) IL=150 mA 380 450 mV
Current Limit Vout=0 160 200 mA
Output Voltage TC (VOUT TC) (Note 12) (Note 4) 50 ppm/°C
Ground Pin Current IL=100 µA 75 120 m A
Ground Pin Current IL=150 mA 8 12 mA
Output Noise Voltage 10Hz to 100KHz,CL=1µF 430 µV rms
Output Noise Voltage 10Hz to 100KHz,CL=200 µF 160 µV rms
Output Noise Voltage 10Hz to 100KHz,CL=13.3 µF 100 µV rms
Thermal Regulation (Note 13) 0.05 0.2 %/W
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the
device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: Unless otherwise specified all limits guaranteed for VIN = ( VONOM +1)V, IL = 100 µA and CL = 1 µF for 5V versions and 2.2µF for 3V and 3.3V
versions. Limits appearing in boldface type apply over the entire junction temperature range for operation. Limits appearing in normal type apply for TA = TJ =
25°C Additional conditions for the 8-pin versions are FEEDBACK tied to VTAP, OUTPUT tied to SENSE and VSHUTDOWN ≤ 0.8V.
Note 3: Guaranteed and 100% production tested.
Note 4: Guaranteed but not 100% production tested. These limits are not used to calculate outgoing AQL levels.
Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 100 mV below its nominal value measured at 1V
differential. At very low values of programmed output voltage, the minimum input supply voltage of 2V ( 2.3V over temperature) must be taken into account.
Note 6: Comparator thresholds are expressed in terms of a voltage differential at the feedback terminal below the nominal reference voltage measured at
VIN = ( VONOM +1)V. To express these thresholds in terms of output voltage change, multiply by the error amplifier gain = Vout/Vref = (R1 + R2)/R2. For
example, at a programmed output voltage of 5V, the error output is guaranteed to go low when the output drops by 95 mV x 5V/1.235 = 384 mV. Thresholds
remain constant as a percent of Vout as Vout is varied, with the dropout warning occurring at typically 5% below nominal, 7.5% guaranteed.
Note 7: Vref ≤Vout ≤ (Vin - 1V), 2.3 ≤Vin≤30V, 100µA≤IL≤ 100 mA, TJ ≤ TJMAX.
Note 8: The junction-to-ambient thermal resistance are as follows:180°C/W and 160°C/W for the TO-92 (N) package with 0.40 inch and 0.25 inch leads to the
printed circuit board (PCB) respectively, 105°C/W for the molded plastic DIP (P) and 160°C/W for the molded plastic SO-8 (S). The above thermal resistances
for the N, S and P packages apply when the package is soldered directly to the PCB.
Note 9: May exceed input supply voltage.
Note 10: When used in dual-supply systems where the output terminal sees loads returned to a negative supply, the output voltage should be diode-clamped to
ground.
Note 11: Vshutdown ≥ 2V, Vin ≤ 30V, Vout =0, Feedback pin tied to 5VTAP.
Note 12: Output or reference voltage temperature coefficients defined as the worst case voltage change divided by the total temperature range.
Note 13: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line
regulation effects. Specifications are for a 50mA load pulse at VIN =30V (1.25W pulse) for T =10 ms.
Note 14: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output voltage due to heating effects
are covered under the specification for thermal regulation.
Note 15: Line regulation for the LP2951 is tested at 150°C for IL = 1 mA. For IL = 100 µA and TJ = 125°C, line regulation is guaranteed by design to 0.2%. See
typical performance characteristics for line regulation versus temperature and load current.
Note 16: All LP2950 devices have the nominal output voltage coded as the last two digits of the part number. In the LP2951 products, the 3.0V and 3.3V
versions are designated by the last two digits, but the 5V version is denoted with no code of the part number.
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: AMS Advanced Monolithic Systems AMS2950CN-3V

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
[mils]
Bonding pads Backside metallization
Silicon
Si
10 1 81x45±1
[2.05x1.15±0.025]
Pads are minimum 4x4mils, 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion.
P/N MetalDie attach process
-BD0Au/SiAu/Si eutectic
-BD1Ti/Pd/AuAuSn,AuGe
-BD2Ti/Pt/AuAuSn,AuGe
-BD3Ti/Ni/AuSoft Solder SAC
-BD4Ti/Pt/AuSnAuSn eutectic

LAYOUT / DIMENSIONS / PAD LOCATIONS
Actual die layout may vary
SMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR SMS2950CN-3V AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR
Pad locations
Pin # Function X [µm] Y [µm] X [mils] Y [mils]
1 Out 440 110 17.32 4.33
2 GND 1865 110 73.43 4.33
3 In 440 950 17.32 37.40
SMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V AMS Advanced Monolithic Systems AMS2950CN-3V 150mA LOW DROPOUT VOLTAGE REGULATOR

APPLICATION HINTS

APPLICATION HINTS


External Capacitors
A 1.0µF or greater capacitor is required between output and ground for stability at output voltages of 5V or more. At lower output voltages, more capacitance is required (2.2µF or more is recommended for 3V and 3.3V versions). Without this capacitor the part will oscillate. Most types of tantalum or aluminum electrolytic works fine here; even film types work but are not recommended for reasons of cost. Many aluminum types have electrolytes that freeze at about -30°C, so solid tantalums are recommended for operation below -25°C. The important parameters of the capacitor are an ESR of about 5Ω or less and resonant frequency above 500 kHz parameters in the value of the capacitor. The value of this capacitor may be increased without limit.
At lower values of output current, less output capacitance is required for stability. The capacitor can be reduced to 0.33µF for currents below 10 mA or 0.1µF for currents below 1mA. Using the adjustable versions at voltages below 5V runs the error amplifier at lower gains so that more output capacitance is needed. For the worst-case situation of a 100mA load at 1.23V output (Output shorted to Feedback) a 3.3µF (or greater) capacitor should be used.
Unlike many other regulators, the SMSLP2950, will remain stable and in regulation with no load in addition to the internal voltage divider. This is especially important in CMOS RAM keep-alive applications. A 1µF tantalum or aluminum electrolytic capacitor should be placed from the SMSLP2950 input to the ground if there is more than 10 inches of wire between the input and the AC filter capacitor or if a battery is used as the input.

Error Detection Comparator Output
The comparator produces a logic low output whenever the SMSLP2950 output falls out of regulation by more than approximately 5%.
This figure is the comparatorís built-in offset of about 60 mV divided by the 1.235 reference voltage. (Refer to the block diagram in the front of the datasheet.) This trip level remains 5% below normal regardless of the programmed output voltage of the
2950. For example, the error flag trip level is typically 4.75V for a 5V output or 11.4V for a 12V output. The out of regulation condition may be due either to low input voltage, current limiting, or thermal limiting. Figure 2 gives a timing diagram depicting the ERROR signal and the regulator output voltage as the SMSLP2950 input is ramped up and down. For 5V versions the ERROR signal becomes valid (low) at about 1.3V input. It goes high at about 5V input (the input voltage at which Vout = 4.75 ).
Since the SMSLP2950 dropout voltage is load dependent (see curve in typical performance characteristics), the input voltage trip point (about 5V) will vary with the load current. The output voltage trip point (approx. 4.75V) does not vary with load.
The error comparator has an open-collector output which requires an external pullup resistor. This resistor may be returned to the output or some other supply voltage depending on system requirements. In determining a value for this resistor, note that the output is rated to sink 400µA, this sink current adds to battery drain in a low battery condition. Suggested values range from 100KOmega; to 1MΩ. The resistor is not required if this output is unused.

Reducing Output Noise
In reference applications it may be an advantageous to reduce the AC noise present at the output. One method is to reduce the regulator bandwidth by increasing the size of the output capacitor.
This is the only way that noise can be reduced on the 3 lead SMSLP2950 but is relatively inefficient, as increasing the capacitor from 1µF to 220µF only decreases the noise from 430µV to 160µV rms for a 100 kHz bandwidth at 5V output.
Noise could also be reduced fourfold by a bypass capacitor across R1, since it reduces the high frequency gain from 4 to unity. Pick
CBYPASS=1/(2πR1) ◊ 200 Hz
or about 0.01µF. When doing this, the output capacitor must be increased to 3.3µF to maintain stability. These changes reduce the output noise from 430µV to 100µV rms for a 100 kHz bandwidth at 5V output. With the bypass capacitor added, noise no longer scales with output voltage so that improvements are more dramatic at higher output voltages.
5Volt Current Limiter
Figure 1: 5Volt Current Limiter
ERROR Output Timing
Figure 2: ERROR Output Timing

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

STANDARD PRODUCTS ORDERING INFORMATION

SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
SMS2950CN-3V-BD -WP 1000 -FF 1000
SMS2950CN-3V-BD -WP 5000 -FF 5000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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