SMX LM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as National Semiconductor LM7806, Fairchild Semiconductor LM7806A, Fairchild Semiconductor LM7806A, Fairchild Semiconductor LM7806I, Fairchild Semiconductor LM7806I, National Semiconductor LM7806, National Semiconductor LM7806CT, Unisonic Technologies LM7806, Unisonic Technologies UTCLM7806 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM7806A, National Semiconductor LM7806, Unisonic Technologies LM7806 SMX LM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS same as National Semiconductor LM7806, Fairchild Semiconductor LM7806A, Fairchild Semiconductor LM7806A, Fairchild Semiconductor LM7806I, Fairchild Semiconductor LM7806I, National Semiconductor LM7806, National Semiconductor LM7806CT, Unisonic Technologies LM7806, Unisonic Technologies UTCLM7806 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM7806A, National Semiconductor LM7806, Unisonic Technologies LM7806 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM7806">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM7806&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM7806 - BARE DIE GOLD CHIP TECHNOLOGY™ 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS FEATURES APPLICATIONS VOLTAGE REGULATOR Output Current in Excess of 1A Output Voltages of +6V Internal Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating area Compensation In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS LM7806 LM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS SMXLM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION SMX LM7806 is a 3-terminal positive voltage regulator designed with built in internal current limiting, thermal shutdown and safe-area compensation for maximum flexibility and safety . With adequate heat sinking provided, USM 7806 can deliver up to 1.5A output current. SMX LM7806 can be used as fixed voltage regulator in a wide range of applications where local voltage regulation is preferred for elimination of noise and distribution problems associated with single-point regulation. SMX LM7806 can also be used (by adding external components) to obtain adjustable output voltages and currents. It is not necessary to bypass the output, although this does improve transient response. Input bypassing is needed only if the regulator is located far from the filter capacitor of the power supply. SMX LM7806 is available in die form only. The die size is 80x80mils. The die thickness is 12 mils 2mils. The bond pad metallization is standard 1µm Aluminum. The backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM7806 National Semiconductor LM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS LM7806 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Internal Power Dissipation (Note1) Pd internally limited W Input Voltage Vin 35 V Maximum Junction Temperature Tj 150 °C Operating Junction Temperature Range Tj 0 to 150 °C Storage Temperature Range Tstg -65 to +150 °C ESD Susceptibility 2 KV ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM7806 ELECTRICAL CHARACTERISTIC –55°C<Tj<+150°C, Vi = 14V, Io = 550mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Output Voltage Tj=25 ° C VO 5.75 6 6.25 V Line Regulation Tj = 25 °C 8.0V<Vi<25V 9.0V<Vi<13V ΔVO 0.5 0.8 24 12 mV Load Regulation Tj = 25 °C 5.0mA<IO<1.5A 250mA<IO< 750mA ΔVO 1.3 30 mV Output Voltage 8V<Vi<21V, 5.0mA <Io<1.0A, P<15W Vo 5.7 6.0 6.3 mV Quiescent Current Tj = 25 °C Iq 8 8.5 mA Quiescent Current With Line With Load 8V<Vi<25V 5.0mA<Io<1.0A DIq 0.3 0.08 1.3 0.5 mA Noise Ta=25°C, 10Hz<f<100kHz Vn 10 µV Ripple Rejection f=120Hz, Io=350mA, Tj=25°C ΔV1/ΔVo 58 65 dB Dropout Voltage Io=1.0A, Tj=25°C Vdo 2.0 V Output Resistance f=1.0kHz Ro 0.9 mW Output Short Circuit Current Tj = 25°C, Vj = 35V Ios 0.2 1.2 A Peak Output Current Tj=25°C Ipk 1.3 2.2 3.3 A Average Temperature Coefficient of Output Voltage –55°C<Ta<+250°C, Io<5mA ΔVo/ΔT -0.3 mV/°C (NOTE 1)Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low duty cycle pulses ONLY. (NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 78.74 x 78.74 ±1 [2 x 2] min 4x4 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM7806 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM7806 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 Ground 67.322 1.71 5.118 2 Input 65.598 1.59 32.086 3 Output 27.16 0.69 66.338 4 Output 7.48 0.19 67.322 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM7806 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USM7806 $320/100pc. -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM7806&idx=25">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

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semiconix semiconductor - where the future is today - gold chip technology SMX LM7806 - BARE DIE
GOLD CHIP TECHNOLOGY™ 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

FEATURES APPLICATIONS VOLTAGE REGULATOR
Output Current in Excess of 1A
Output Voltages of +6V
Internal Thermal Overload Protection
Short Circuit Protection
Output Transistor Safe
Operating area Compensation



In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS









LM7806 LM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

SMXLM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS - PRODUCT DESCRIPTION
SMX LM7806 is a 3-terminal positive voltage regulator designed with built in internal current limiting, thermal shutdown and safe-area compensation for maximum flexibility and safety . With adequate heat sinking provided, USM 7806 can deliver up to 1.5A output current. SMX LM7806 can be used as fixed voltage regulator in a wide range of applications where local voltage regulation is preferred for elimination of noise and distribution problems associated with single-point regulation. SMX LM7806 can also be used (by adding external components) to obtain adjustable output voltages and currents. It is not necessary to bypass the output, although this does improve transient response. Input bypassing is needed only if the regulator is located far from the filter capacitor of the power supply. SMX LM7806 is available in die form only. The die size is 80x80mils. The die thickness is 12 mils 2mils. The bond pad metallization is standard 1µm Aluminum. The backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM7806 National Semiconductor LM7806 6V POSITIVE VOLTAGE REGULATOR DIE FOR HYBRID CIRCUITS

LM7806 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Internal Power Dissipation (Note1)Pdinternally limitedW
Input Voltage Vin35V
Maximum Junction TemperatureTj150°C
Operating Junction Temperature RangeTj0 to 150°C
Storage Temperature RangeTstg-65 to +150°C
ESD Susceptibility 2 KV
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM7806 ELECTRICAL CHARACTERISTIC
–55°C<Tj<+150°C, Vi = 14V, Io = 550mA, Ci = 0.33µF, Co= 0.1µF, unless otherwise specified
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Output VoltageTj=25 ° CVO5.7566.25V
Line RegulationTj = 25 °C 8.0V<Vi<25V 9.0V<Vi<13VΔVO0.5 0.824 12mV
Load RegulationTj = 25 °C 5.0mA<IO<1.5A 250mA<IO< 750mAΔVO1.330mV
Output Voltage8V<Vi<21V, 5.0mA <Io<1.0A, P<15WVo5.76.06.3mV
Quiescent CurrentTj = 25 °CIq88.5mA
Quiescent Current With Line With Load8V<Vi<25V 5.0mA<Io<1.0ADIq0.3 0.081.3 0.5mA
NoiseTa=25°C, 10Hz<f<100kHzVn10µV
Ripple Rejectionf=120Hz, Io=350mA, Tj=25°CΔV1/ΔVo5865dB
Dropout VoltageIo=1.0A, Tj=25°CVdo2.0V
Output Resistancef=1.0kHzRo0.9mW
Output Short Circuit CurrentTj = 25°C, Vj = 35VIos0.21.2A
Peak Output CurrentTj=25°CIpk1.32.23.3A
Average Temperature Coefficient of Output Voltage–55°C<Ta<+250°C, Io<5mAΔVo/ΔT-0.3mV/°C
(NOTE 1)Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects have to be added to those due to the Io. The device should be subject to low duty cycle pulses ONLY.
(NOTE 2)All characteristics are measured with a 0.22µF capacitor from input to ground and a 0.1µF capacitor from output to ground. All characteristics except noise voltage and ripple rejection ratio are measured using pulse techniques (tw<10ms, duty cycle<5%). Output voltage changes due to changes in internal temperature must be taken into account separately.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Fairchild Semiconductor LM7806A, National Semiconductor LM7806, Unisonic Technologies LM7806

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 78.74 x 78.74 ±1
[2 x 2]
min 4x4 mils, 1µm thick, aluminium Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM7806 DIE LAYOUT - MECHANICAL SPECIFICATIONSLM7806 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1Ground67.3221.715.118
2Input65.5981.5932.086
3Output27.160.6966.338
4Output7.480.1967.322

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM7806 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USM7806$320/100pc.-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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