SMX LM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS same as Fairchild Semiconductor LM358, Fairchild Semiconductor LM358, Fairchild Semiconductor LM358M, Fairchild Semiconductor LM358MX, Fairchild Semiconductor LM358N, Fairchild Semiconductor LM358AM, Fairchild Semiconductor LM358AMX, Fairchild Semiconductor LM358AN, Fairchild Semiconductor LM358A, Intersil LM358N, Intersil LM358, Motorola LM358N, Motorola LM358D, Motorola LM358, National Semiconductor LM358 MWA, National Semiconductor LM358AN, National Semiconductor LM358AMX, National Semiconductor LM358, National Semiconductor LM358AM, National Semiconductor LM358MX, National Semiconductor LM358TPX, National Semiconductor LM358TP, National Semiconductor LM358 MDA, National Semiconductor LM358BPX, National Semiconductor LM358H, National Semiconductor LM358BP, National Semiconductor LM358M, National Semiconductor LM358N, ON Semiconductor LM358DMR2, ON Semiconductor LM358DR2, ON Semiconductor LM358-D, ON Semiconductor LM358, ON Semiconductor LM358D, ON Semiconductor LM358N, Philips LM358A, Philips LM358AD, Philips LM358, Philips LM358N, Philips LM358D, Philips LM358AN, SGS Thomson Microelectronics LM358A, ST Microelectronics LM358WDT, ST Microelectronics LM358DT, ST Microelectronics LM358WD, ST Microelectronics LM358WN, ST Microelectronics LM358W, ST Microelectronics LM358ST, ST Microelectronics LM358N, ST Microelectronics LM358PT, ST Microelectronics LM358AP, ST Microelectronics LM358, ST Microelectronics LM358AN, ST Microelectronics LM358APT, ST Microelectronics LM358A, ST Microelectronics LM358AST, ST Microelectronics LM358AWD, ST Microelectronics LM358P, ST Microelectronics LM358D, ST Microelectronics LM358AD, ST Microelectronics LM358ADT, Texas Instruments LM358AP, Texas Instruments LM358A, Texas Instruments LM358, Texas Instruments LM358PWR, Texas Instruments LM358DR, Texas Instruments LM358Y, Texas Instruments LM358YD, Texas Instruments LM358YJG, Texas Instruments LM358YP, Texas Instruments LM358YPW, Texas Instruments LM358PWLE, Texas Instruments LM358PW, Texas Instruments LM358DGKR, Texas Instruments LM358D, Texas Instruments LM358JG, Texas Instruments LM358APWR, Texas Instruments LM358APW, Texas Instruments LM358AJG, Texas Instruments LM358ADR, Texas Instruments LM358ADGKR, Texas Instruments LM358P, Texas Instruments LM358PSLE, Texas Instruments LM358PSR, Texas Instruments LM358AD, Unisonic Technologies UTCLM358, Wing Shing Computer Components LM358 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM358, Intersil LM358, Motorola LM358, National Semiconductor LM358, ON Semiconductor LM358, Philips LM358, SGS Thomson Microelectronics LM358A, ST Microelectronics LM358, Texas Instruments LM358, Unisonic Technologies UTCLM358, Wing Shing Computer Components LM358 SMX LM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS same as Fairchild Semiconductor LM358, Fairchild Semiconductor LM358, Fairchild Semiconductor LM358M, Fairchild Semiconductor LM358MX, Fairchild Semiconductor LM358N, Fairchild Semiconductor LM358AM, Fairchild Semiconductor LM358AMX, Fairchild Semiconductor LM358AN, Fairchild Semiconductor LM358A, Intersil LM358N, Intersil LM358, Motorola LM358N, Motorola LM358D, Motorola LM358, National Semiconductor LM358 MWA, National Semiconductor LM358AN, National Semiconductor LM358AMX, National Semiconductor LM358, National Semiconductor LM358AM, National Semiconductor LM358MX, National Semiconductor LM358TPX, National Semiconductor LM358TP, National Semiconductor LM358 MDA, National Semiconductor LM358BPX, National Semiconductor LM358H, National Semiconductor LM358BP, National Semiconductor LM358M, National Semiconductor LM358N, ON Semiconductor LM358DMR2, ON Semiconductor LM358DR2, ON Semiconductor LM358-D, ON Semiconductor LM358, ON Semiconductor LM358D, ON Semiconductor LM358N, Philips LM358A, Philips LM358AD, Philips LM358, Philips LM358N, Philips LM358D, Philips LM358AN, SGS Thomson Microelectronics LM358A, ST Microelectronics LM358WDT, ST Microelectronics LM358DT, ST Microelectronics LM358WD, ST Microelectronics LM358WN, ST Microelectronics LM358W, ST Microelectronics LM358ST, ST Microelectronics LM358N, ST Microelectronics LM358PT, ST Microelectronics LM358AP, ST Microelectronics LM358, ST Microelectronics LM358AN, ST Microelectronics LM358APT, ST Microelectronics LM358A, ST Microelectronics LM358AST, ST Microelectronics LM358AWD, ST Microelectronics LM358P, ST Microelectronics LM358D, ST Microelectronics LM358AD, ST Microelectronics LM358ADT, Texas Instruments LM358AP, Texas Instruments LM358A, Texas Instruments LM358, Texas Instruments LM358PWR, Texas Instruments LM358DR, Texas Instruments LM358Y, Texas Instruments LM358YD, Texas Instruments LM358YJG, Texas Instruments LM358YP, Texas Instruments LM358YPW, Texas Instruments LM358PWLE, Texas Instruments LM358PW, Texas Instruments LM358DGKR, Texas Instruments LM358D, Texas Instruments LM358JG, Texas Instruments LM358APWR, Texas Instruments LM358APW, Texas Instruments LM358AJG, Texas Instruments LM358ADR, Texas Instruments LM358ADGKR, Texas Instruments LM358P, Texas Instruments LM358PSLE, Texas Instruments LM358PSR, Texas Instruments LM358AD, Unisonic Technologies UTCLM358, Wing Shing Computer Components LM358 manufactured by Semiconix Semiconductor - Gold chip technology for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor - Goldchip technology is trademark of Semiconix Corporation for known good die, flip chip, bare die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Fairchild Semiconductor LM358, Intersil LM358, Motorola LM358, National Semiconductor LM358, ON Semiconductor LM358, Philips LM358, SGS Thomson Microelectronics LM358A, ST Microelectronics LM358, Texas Instruments LM358, Unisonic Technologies UTCLM358, Wing Shing Computer Components LM358 REGISTER-LOGIN PRODUCTS CROSS REFERENCE /cgi-bin/stock.pl?part=LM358">INVENTORY /cgi-bin/rfq.cgi?site=4&rows=1&item_1=SMXLM358&c_item_1=">REQUEST QUOTE smxrootwww.semiconix.com/cgi-bin/order.cgi?site=">ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMX LM358 - BARE DIE GOLD CHIP TECHNOLOGY™ DUAL LOW POWER OPERATIONAL AMPLIFIERS FEATURES APPLICATIONS DUAL LOW POWER OPERATIONAL AMPLIFIERS Short Circuit Protected Outputs True Differential Input Stage Single Supply Operation: 3.0 V to 32 V Low Input Bias Currents Internally Compensated Common Mode Range Extends to Negative Supply Single and Split Supply Operation; Similar Performance to the Popular MC1558 ESD Clamps on the Inputs Increase Ruggedness of the Device without Affecting Operation In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS. LM358 LM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS SMXLM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS - PRODUCT DESCRIPTION Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE , 3) single supply or split supply operation and 4) pin outs compatible with the popular MC1558 dual operational amplifier. These amplifiers have several distinct advantages over standard operational amplifier types in single supply applications. They can operate at supply voltages as low as 3.0 V or as high as 32 V, with quiescent currents about one-fifth of those associated with the MC1741 (on a per amplifier basis). The common mode input range includes the negative supply, thereby eliminating the necessity for external biasing components in many applications. The output voltage range also includes the negative power supply voltage. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions. SCHEMATIC DIAGRAM LM358 Fairchild Semiconductor LM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS LM358 MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNITS Power supply range - Single Supply VCC 32 V Power supply range - Split Supplies VCC, VEE ±16 V Input Differential Voltage Range (Note 1) Vdir ±32 V Input Common Mode Voltage Range (Note 2) Vicr -0.3 to 32 V Output Short Circuit Duration tsc Continuous Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55 to +125 °C Operating Ambient Temperature Range Topa 0 to +70 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. LM358 ELECTRICAL CHARACTERISTIC TA = +25°C, unless otherwise specified PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS Input Offset Voltage VCC=5.0V to 30V VIC=0V to VCC=1.7V VO=1.4V, RS=0W TA=25°C TA=Thigh (Note 1) TA=Tlow (Note 1) VIO 2 7.0 9.0 9.0 mV Average Temperature Coefficient of Input Offset Voltage TA=Thigh to Tlow (Note 1) 7.0 µV/°C Input Offset Current Input Bias Current TA=Thigh to Tlow (Note 1) TA=Thigh to Tlow (Note 1) IIO 5.0 - -45 -50 30 75 -250 -500 nA Average Temperature Coefficient of Input Offset Voltage TA=Thigh to Tlow (Note 1) 10 pA/°C Input Common Mode Voltage Range (Note 2) VCC=30V VCC=30V TA=Thigh to Tlow (Note 1) VICR 0 0 28.3 28 V Large Signal Open Loop Voltage Gain RL=2.0kOhm, VCC=15V, for Large VOSwing, TA=Thigh to Tlow (Note 1) AVOL 25 15 100 - - - V/mV Channel Separation 1.0kHz≤f≤20kHz Input Referenced CS - -120 - dB Common Mode Rejection RS≤10kW CMR 65 70 dB Power Supply Rejection PSR 65 100 dB Output Voltage-High Limit (TA=Thigh to Tlow) (Note 1) VCC=5.0V, RL=2.0kW, TA=25°C VCC=30V, RL=2.0kW VCC=30V, RL=10kW VOH 3.3 26 27 3.5 - 28 - - - V Output Voltage-Low Limit VCC=5.0V, RL=10kW (TA=Thigh to Tlow) (Note 1) VOL - 5 20 mV Output Source Current VID=+1.0V, VCC=15V IO + 20 40 mA Output Sink Current VID=-1.0V, VCC=15V VID=-1.0V, VCC=200mV IO - 10 12 20 50 - - mA µA Output Short Circuit to Ground (Note 3) ISC - 40 60 mA Power Supply Current TA=Thigh to Tlow (Note 1) VCC=30V, VO=0V, RL=¥ VCC=5.0V, VO=0V, RL=¥ ICC - - 1.5 0.7 3.0 1.2 mA Differential Input Voltage Range VIDR VCC V (NOTE 1)Tlow=0°C for USM358, Thigh=+70°C for USM358, (NOTE 2)The input common mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V. The upper end of the common mode voltage range is VCC -1.7V. (NOTE 3)Short circuits from the output to VCC can cause excessive heating and eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. SPICE MODEL CROSS REFERENCE PARTS GENERAL DIE INFORMATION Substrate Thickness [mils] Die size mils [mm] Bonding pads Backside metallization Silicon 10 64.961 x 35.433 ±1 [1.65 x 0.9] 4.724x4.724(mils) Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. LM358 DIE LAYOUT - MECHANICAL SPECIFICATIONS LM358 DIE LAYOUT - MECHANICAL SPECIFICATIONS PAD # FUNCTION X(mils) X(mm) Y(mils) 1 #1 OUT 3.346 0.085 24.606 2 #1 IN- 7.165 0.182 3.465 3 #1 IN+ 20.394 0.518 3.465 4 GND 33.268 0.845 3.465 5 #2 IN+ 41.142 1.045 3.465 6 #2 IN- 54.37 1.381 3.465 7 #2 OUT 58.189 1.478 24.606 8 VCC 35.787 0.909 28.346 SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000. LM358 STANDARD PRODUCTS PRICE LIST USM PART # MINIMUM ORDER QUANTITY Waffle Packs U/P($) USMLM358 100pc -WP $3.20 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES /cgi-bin/getpdf.pl?part=SMXLM358&idx=9">PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated: Display settings for best viewing: Current display settings: Page hits: Screen resolution: 1124x864 Screen resolution: Total site visits: Color quality: 16 bit Color quality: bit © 1990- SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission. Valid XHTML 1.0 Transitional by http://validator.w3.org

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMX LM358 - BARE DIE
GOLD CHIP TECHNOLOGY™ DUAL LOW POWER OPERATIONAL AMPLIFIERS

FEATURES APPLICATIONS DUAL LOW POWER OPERATIONAL AMPLIFIERS
Short Circuit Protected Outputs
True Differential Input Stage
Single Supply Operation: 3.0 V to 32 V
Low Input Bias Currents
Internally Compensated
Common Mode Range Extends to Negative Supply
Single and Split Supply Operation; Similar Performance to the Popular MC1558
ESD Clamps on the Inputs Increase Ruggedness of the Device without Affecting Operation

In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS.









LM358 LM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS

SMXLM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS - PRODUCT DESCRIPTION
Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to ground/VEE , 3) single supply or split supply operation and 4) pin outs compatible with the popular MC1558 dual operational amplifier. These amplifiers have several distinct advantages over standard operational amplifier types in single supply applications. They can operate at supply voltages as low as 3.0 V or as high as 32 V, with quiescent currents about one-fifth of those associated with the MC1741 (on a per amplifier basis). The common mode input range includes the negative supply, thereby eliminating the necessity for external biasing components in many applications. The output voltage range also includes the negative power supply voltage.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

SEMICONDUCTOR INTEGRATED CIRCUITS MANUFACTURING PROCESS
Semiconductor Integrated Circuits are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with other semiconductor devices on same chip to obtain standard and custom complex device solutions.


SCHEMATIC DIAGRAM
LM358 Fairchild Semiconductor LM358 DUAL LOW POWER OPERATIONAL AMPLIFIERS

LM358 MAXIMUM RATINGS
PARAMETERSYMBOLVALUEUNITS
Power supply range - Single SupplyVCC32V
Power supply range - Split SuppliesVCC, VEE±16V
Input Differential Voltage Range (Note 1)Vdir±32V
Input Common Mode Voltage Range (Note 2)Vicr-0.3 to 32V
Output Short Circuit DurationtscContinuous 
Junction TemperatureTj150°C
Storage Temperature RangeTstg-55 to +125°C
Operating Ambient Temperature RangeTopa0 to +70°C
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

LM358 ELECTRICAL CHARACTERISTIC
TA = +25°C, unless otherwise specified
PARAMETERTEST CONDITIONSSYMBOLMINTYPMAXUNITS
Input Offset VoltageVCC=5.0V to 30V VIC=0V to VCC=1.7V VO=1.4V, RS=0W TA=25°C TA=Thigh (Note 1) TA=Tlow (Note 1)VIO2 7.0 9.0 9.0mV
Average Temperature Coefficient of Input Offset VoltageTA=Thigh to Tlow (Note 1)7.0µV/°C
Input Offset Current Input Bias CurrentTA=Thigh to Tlow (Note 1) TA=Thigh to Tlow (Note 1)IIO5.0 - -45 -5030 75 -250 -500nA
Average Temperature Coefficient of Input Offset VoltageTA=Thigh to Tlow (Note 1)10pA/°C
Input Common Mode Voltage Range (Note 2)VCC=30V VCC=30V TA=Thigh to Tlow (Note 1)VICR0 028.3 28V
Large Signal Open Loop Voltage GainRL=2.0kOhm, VCC=15V, for Large VOSwing, TA=Thigh to Tlow (Note 1)AVOL25 15100 -- -V/mV
Channel Separation1.0kHz≤f≤20kHz Input ReferencedCS--120-dB
Common Mode RejectionRS≤10kWCMR6570dB
Power Supply RejectionPSR65100dB
Output Voltage-High Limit(TA=Thigh to Tlow) (Note 1) VCC=5.0V, RL=2.0kW, TA=25°C VCC=30V, RL=2.0kW VCC=30V, RL=10kWVOH 3.3 26 27 3.5 - 28 - - -V
Output Voltage-Low LimitVCC=5.0V, RL=10kW (TA=Thigh to Tlow) (Note 1)VOL-520mV
Output Source CurrentVID=+1.0V, VCC=15VIO +2040mA
Output Sink CurrentVID=-1.0V, VCC=15V VID=-1.0V, VCC=200mVIO -10 1220 50- -mA µA
Output Short Circuit to Ground (Note 3)ISC-4060mA
Power Supply CurrentTA=Thigh to Tlow (Note 1) VCC=30V, VO=0V, RL=¥ VCC=5.0V, VO=0V, RL=¥ICC - - 1.5 0.7 3.0 1.2mA
Differential Input Voltage RangeVIDRVCCV
(NOTE 1)Tlow=0°C for USM358, Thigh=+70°C for USM358,
(NOTE 2)The input common mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V. The upper end of the common mode voltage range is VCC -1.7V.
(NOTE 3)Short circuits from the output to VCC can cause excessive heating and eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.

SPICE MODEL
Spice model pending.
 
CROSS REFERENCE PARTS
Fairchild Semiconductor LM358, Intersil LM358, Motorola LM358, National Semiconductor LM358, ON Semiconductor LM358, Philips LM358, SGS Thomson Microelectronics LM358A, ST Microelectronics LM358, Texas Instruments LM358, Unisonic Technologies UTCLM358, Wing Shing Computer Components LM358

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Die size
mils [mm]
Bonding pads Backside metallization
Silicon 10 64.961 x 35.433 ±1
[1.65 x 0.9]
4.724x4.724(mils) Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach.

LM358 DIE LAYOUT - MECHANICAL SPECIFICATIONSLM358 DIE LAYOUT - MECHANICAL SPECIFICATIONS
PAD #FUNCTIONX(mils)X(mm)Y(mils)
1#1 OUT3.3460.08524.606
2#1 IN-7.1650.1823.465
3#1 IN+20.3940.5183.465
4GND33.2680.8453.465
5#2 IN+41.1421.0453.465
6#2 IN-54.371.3813.465
7#2 OUT58.1891.47824.606
8VCC35.7870.90928.346

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. See Application note AN-SMX-000.

LM358 STANDARD PRODUCTS PRICE LIST
USM PART #MINIMUM ORDER QUANTITYWaffle PacksU/P($)
USMLM358100pc-WP$3.20
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONIX SEMICONDUCTOR technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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